APT6030BVFR Arkusz danych(PDF) - Advanced Power Technology

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APT6030BVFR Arkusz danych (PDF) - Advanced Power Technology

APT6030BVFR Datasheet PDF - Advanced Power Technology


Numer części	APT6030BVFR

Pobierz	APT6030BVFR Pobierz

Rozmiar pliku	142.99 Kbytes

Page	4 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

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Szczegółowy opis

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6030BVFR Datasheet (PDF)

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Pobierz Arkusz danych

APT6030BVFR Datasheet PDF - Advanced Power Technology


Numer części	APT6030BVFR

Pobierz	APT6030BVFR Click to download

Rozmiar pliku	142.99 Kbytes

Page	4 Pages

Producent	ADPOW [Advanced Power Technology]

Strona internetowa	http://www.advpowertech.com

Logo

Szczegółowy opis	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT6030BVFR Arkusz danych (HTML) - Advanced Power Technology

APT6030BVFR Datasheet HTML 1Page - Advanced Power Technology

APT6030BVFR Datasheet HTML 2Page - Advanced Power Technology

APT6030BVFR Datasheet HTML 3Page - Advanced Power Technology

APT6030BVFR Datasheet HTML 4Page - Advanced Power Technology

Podobny numer części - APT6030BVFR

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced Power Technolo...	APT6030BVFR	64Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Inchange Semiconductor ...	APT6030BVFR	420Kb / 2P	isc N-Channel MOSFET Transistor

Podobny opis - APT6030BVFR

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced Power Technolo...	APT1001R1BVFR	70Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10040B2VFR	40Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10043JVR	73Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10050B2VR	59Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10050JVFR	70Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M09B2VFR	41Kb / 2P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M25BVFR	69Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT10M25SVR	68Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
	APT10M30AVR	66Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
	APT20M11JVFR	74Kb / 4P	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

O Advanced Power Technology

Advanced Power Technology (APT) is a semiconductor company that designs, manufactures and sells power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). The company was founded in 1986 and is headquartered in Bend, Oregon, USA.

APT's products are used in a wide range of applications, including automotive, industrial, communications, and consumer electronics. The company offers a wide range of MOSFETs and IGBTs with different voltage and current ratings, package options and other features to meet the specific needs of its customers.

APT is known for its commitment to quality and innovation. The company's products are designed to meet the highest standards of performance and reliability, and are manufactured using the latest technology and materials. APT also offers custom design and engineering services to meet the specific needs of its customers.

APT has a global presence, with sales offices and representatives located around the world. The company is dedicated to delivering innovative and reliable power MOSFETs and IGBTs that meet the evolving needs of the electronics industry. In 2000, APT was acquired by Microsemi Corporation, which later became part of Microchip Technology Inc.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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