GENERAL DESCRIPTION
SVS24N60F(FJ)(PN)(T)D2 is an N-channel enhancement mode high
voltage power MOSFET produced using Silan’s DP MOS technology. It
achieves low conduction loss and switching losses. It leads the design
engineers to their power converters with high efficiency, high power
density, and superior thermal behavior. Furthermore, it’s universal
applicable, for example. it is suitable for hard and soft switching
topologies.

FEATURES
 24A, 600V, RDS(on)(typ.)=0.14@VGS=10V
 New revolutionary high voltage technology
 Ultra low gate charge
 Periodic avalanche rated
 Extreme dv/dt rated
 High peak current capability