FEATURES
• Rated impulse voltage (transient overvoltage)
VIOTM = 6 kVpeak
• Isolation test voltage (partial discharge test
voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)
VIORM = 850 Vpeak
• Creepage current resistance according to IEC 112,
comparative tracking index: CTI  250
• Thickness through insulation  0.4 mm
• Isolation materials according to UL 94 V-O
• Pollution degree 2 (resp. IEC 664)
• Climatic classification 55/100/21 (IEC 68 part 1)
• Low temperature coefficient of CTR
• G = leadform 10.16 mm; provides creepage distance
> 8 mm, suffix letter “G” is not marked on the optocoupler
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC

APPLICATIONS
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface

DESCRIPTION
The HS817 series consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a
4-lead plastic dual inline package.