Functional Description^[1]

The CY62136VN is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life™ (MoBL®) in  portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O 15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Features

• Temperature Ranges

   — Industrial: –40°C to 85°C

   — Automotive-A: –40°C to 85°C

   — Automotive-E: –40°C to 125°C

• High speed: 55 ns

• Wide voltage range: 2.7V–3.6V

• Ultra-low active, standby power

• Easy memory expansion with CE and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Available in standard Pb-free 44-pin TSOP Type II, Pb-free and non Pb-free 48-ball FBGA packages