ADM10N06S Arkusz danych(PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM10N06S Arkusz danych (PDF) - Advanced (Shenzhen) Electronics Co.,Ltd

ADM10N06S Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


Numer części	ADM10N06S

Pobierz	ADM10N06S Pobierz

Rozmiar pliku	466.81 Kbytes

Page	5 Pages

Producent	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

Strona internetowa	http://www.advsemi.com/en/

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Szczegółowy opis

N-Channel Enhancement Mode Field Effect Transistor

ADM10N06S Datasheet (PDF)

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Pobierz Arkusz danych

ADM10N06S Datasheet PDF - Advanced (Shenzhen) Electronics Co.,Ltd


Numer części	ADM10N06S

Pobierz	ADM10N06S Click to download

Rozmiar pliku	466.81 Kbytes

Page	5 Pages

Producent	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

Strona internetowa	http://www.advsemi.com/en/

Logo

Szczegółowy opis	N-Channel Enhancement Mode Field Effect Transistor

ADM10N06S Arkusz danych (HTML) - Advanced (Shenzhen) Electronics Co.,Ltd

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ADM10N06S Szczegóły Produktu

Features:
● Low Gate Charge for Fast Switching Application
● Low RDS(ON) to Minimize Conductive Loss
● 100% EAS Guaranteed
● Optimized V(BR)DSS Ruggedness
● Green Device Available

Description:
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. design to provide excellent RDS(ON) with low gate charge.provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency fast switching applications.

Podobny numer części - ADM10N06S

Producent	Numer części	Arkusz danych	Szczegółowy opis
Advanced (Shenzhen) Ele...	ADM10N03S	655Kb / 6P	N -C hannel E nhancem ent M ode Field E ffect Transistor Ver.0.12

Podobny opis - ADM10N06S

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	PHD83N03LT	282Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
	PHP112N06T	262Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-07 March 2001
	PHP47NQ10T	267Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-16 May 2001
	PHP78NQ03LT	292Kb / 14P	N-channel enhancement mode field-effect transistor Rev. 01-14 November 2001
	SI4410DY	266Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 02-05 July 2001
	SI4416DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-05 June 2001
	SI4420DY	254Kb / 12P	N-channel enhancement mode field-effect transistor Rev. 01-28 May 2001
	SI9956DY	253Kb / 13P	N-channel enhancement mode field-effect transistor Rev. 01-16 July 2001
Fairchild Semiconductor	FDC633N	278Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
Fairchild Semiconductor	FDT459N	89Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor

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