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STCV20700BY4V Arkusz danych (PDF) - Innogration Technologies, Inc.
STCV20700BY4V Datasheet PDF - Innogration Technologies, Inc.
Numer części STCV20700BY4V
Pobierz  STCV20700BY4V Pobierz
Rozmiar pliku   1644.07 Kbytes
Page   8 Pages
Producent  INNOGRATION [Innogration Technologies, Inc.]
Strona internetowa  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Szczegółowy opis Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

STCV20700BY4V Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
STCV20700BY4V Datasheet PDF - Innogration Technologies, Inc.

Numer części STCV20700BY4V
Pobierz  STCV20700BY4V Click to download

Rozmiar pliku   1644.07 Kbytes
Page   8 Pages
Producent  INNOGRATION [Innogration Technologies, Inc.]
Strona internetowa  http://www.innogration.net/index.htm
Logo INNOGRATION - Innogration Technologies, Inc.
Szczegółowy opis Gallium Nitride 50V, 700W,1.8-2.0GHz RF Power Transistor

STCV20700BY4V Arkusz danych (HTML) - Innogration Technologies, Inc.


STCV20700BY4V Szczegóły Produktu

Description
The STCV20700BY4V is a 700-watt, internally matched GaN HEMT, designed for 5G cellular
applications with frequencies from 1.8-2.0GHz, enabled by wide band VBW capability to
support IBW up to 200MHz..
It can be configured as asymmetrical Doherty for 4G or 5G application, delivering 100 to 115W
average power, according to normal 8 to 8.5dB back off.
There is no guarantee of performance when this part is used in applications designed
Outside of these frequencies.

Applications
 Asymmetrical Doherty amplifier within N3 5G band and B3 4G band
 L band power amplifier




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