General Description
DOSEMI IGBT Power Discrete provides ultra low conduction loss They are designed for the applications such as solar power and EV PTC.

Features
 Low VCE(sat) IGBT technology
 Maximum junction temperature 175oC
 VCE(sat) with positive temperature coefficient
 Fast & soft reverse recovery anti-parallel FWD

Typical Applications
 Solar power
 UPS
 EV PTC