TOSHIBA Power Transistor Module   Silicon NPN Epitaxial
(Type Four Darlington Power Transistors   in One)

High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
•  Small package by full molding (SIP 10 pins)
•  Built-in resistance (RB).
•  Surge voltage is clamped by zener diode (C-B).
•  Low VCE (sat): VCE (sat)= 1.5 V (max) (IC= 1 A, VBH= 4.2 V)
•  High DC current gain: hFE= 2000 (min) (VCE= 2 V, IC= 1 A)