Features
▪ Very low rDS(ON) 45mΩ (typical)
▪ Ultra low total gate charge 2.5nC (typical)
▪ SEE hardness (see SEE report for details)
• SEL/SEB LETTH (VDS = 160V, VGS = 0V):
86MeV•cm2/mg(Si)
▪ ISL70024SEH radiation acceptance (see TID
report)
• High dose rate (50-300rad(Si)/s): 100krad(Si)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
▪ ISL73024SEH radiation acceptance (see TID
report)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
▪ Ultra small hermetically sealed 4 Ld Surface Mount
Device (SMD) package
• Package area: 42mm2
▪ Full military-temperature range operation
• TA = -55°C to +125°C
• TJ = -55°C to +150°C
▪ Qualified to Renesas Rad Hard GaN FET
Screening and QCI Flow (R34TB0003EU)
• All screening and QCI is in accordance with
MIL-PRF-38535L Class-V