Features
▪ Qualified to Renesas Rad Tolerant Screening and
QCI Flow (R34TB0004EU)
▪ Wide operating voltage range of 4.5V to 13.2V
▪ Up to 14.7V logic inputs (regardless of VDD level)
• Inverting and non-inverting inputs
▪ Optimized to drive enhancement mode GaN FETs
• Internal 4.5V regulated gate drive voltage
• Independent outputs for adjustable
turn-on/turn-off speeds
▪ NiPdAu-Ag Lead finish (Sn-free, Pb-free)
▪ Moisture Sensitivity Level (MSL) Rating: 1
▪ Passes NASA Low Outgassing Specifications
▪ Full military temperature range operation
• TA = -55°C to +125°C
• TJ = -55°C to +150°C
▪ TID Radiation Lot Acceptance Testing (LDR:
<0.01rad(Si)/s)
• ISL71040M30RTZ: 30krad(Si)
• ISL71040M50RTZ: 50krad(Si)
▪ SEE Characterization
• No DSEE with VDD = 16.5V at 43MeV•cm2/mg
• SET ≤15μm2 at 43MeV•cm2/mg