FEATURES
 Electrostatic Sensitive Devices.
 VDS (V) = -20V
 ID =-4 A
 RDS(ON) < 50mΩ (VGS = -4.5V)
RDS(ON) < 70mΩ (VGS = -2.5V)
RDS(ON) < 100mΩ (VGS = -1.8V)

APPLICATIONS
 P-channel enhancement mode effect transistor.
 Switching application.