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IS67WVC4M16ECLL Arkusz danych (PDF) - Integrated Silicon Solution, Inc

IS67WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc
Numer części IS67WVC4M16ECLL
Pobierz  IS67WVC4M16ECLL Pobierz
Rozmiar pliku   1889.59 Kbytes
Page   68 Pages
Producent  ISSI [Integrated Silicon Solution, Inc]
Strona internetowa  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Szczegółowy opis 64Mb Async/Page/Burst CellularRAM 1.5

IS67WVC4M16ECLL Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
IS67WVC4M16ECLL Datasheet PDF - Integrated Silicon Solution, Inc

Numer części IS67WVC4M16ECLL
Pobierz  IS67WVC4M16ECLL Click to download

Rozmiar pliku   1889.59 Kbytes
Page   68 Pages
Producent  ISSI [Integrated Silicon Solution, Inc]
Strona internetowa  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Szczegółowy opis 64Mb Async/Page/Burst CellularRAM 1.5

IS67WVC4M16ECLL Arkusz danych (HTML) - Integrated Silicon Solution, Inc


IS67WVC4M16ECLL Szczegóły Produktu

Features
⚫ Single device supports asynchronous , page,
and burst operation
⚫ Mixed Mode supports asynchronous write and
synchronous read operation
⚫ Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
⚫ Asynchronous mode read access : 70ns
Interpage Read access : 70ns
Intrapage Read access : 25ns
⚫ Burst mode for Read and Write operation
 4, 8, 16,32 or Continuous
⚫ Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 20mA
 Burst operation < 35 mA (@104Mhz)
 Standby < 180 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
⚫ Low Power Feature
 Reduced Array Refresh
 Temperature Controlled Refresh
 Deep power-down (DPD) mode
⚫ Operation Frequency up to 104Mhz
⚫ Operating temperature Range
Industrial: -40°C~85°C
Automotive A1: -40°C~85°C
⚫ Package: 54-ball VFBGA




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O Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.




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