[Description]
Silicon TO-126 PNP Power Transistor for use in power amplifier
and switching excellent safe area limits.
Absolute Maximum Ratings:
Characteristic Symbol Rating
Collector - Base Voltage Vcbo 80V
Collector - Emitter Voltage Vceo 80V
Emitter - Base Voltage Vebo 5V
Continuous Collector Current Ic 4A
Base Current Ib 1A
Total Device Dissipation (Tc = +25°C) Pd 40W
Derate above 25°C 320mW/°C
Operating Junction Temperature Range Tj -65°C to +150°C
Storage Temperature Range Tstg -65°C to +150°C
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter Symbol Test Conditions Min. Max. Unit
OFF Characteristics
Collector - Emitter Breakdown Voltage V(br)ceo Ic = 100mA, Ib = 0 (Note1) 80 - V
Iceo Vce = 80V, Ie = 0 - 1 mA
Collector Cut-off Current Icbx Vce = 80V, Veb(off) = 1.5V - 0.1 mA
Iceo Vce = 80V, Ie = 0 - 0.1 mA
Emitter Cut-off Current Iebo Veb = 5V, Ic = 0 - 1 mA
ON Characteristics (Note 1)
Vce = 2V, Ic = 1.5A 20 80 -
DC Current Gain hfe
Vce = 2V, Ic = 4A 7 - -
Ic = 1.5A, Ib = 0.15mA - 0.6 V
Collector - Emitter Saturation Voltage Vce(sat)
Ic = 4A, Ib = 1A - 1.4 V
Base - Emitter On Voltage Vbe(on) Ic = 1.5A, Vce = 2V - 1.2 V