DESCRIPTION
This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturingreproducibility.

■ TYPICAL RDS(on) = 0.014 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE A 100 °C
■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)