RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET



Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common- source amplifier applications in 26 volt base station equipment.



• Typical Two- Tone Performance at 945 MHz, 26 Volts

         Output Power - 30 Watts PEP

         Power Gain - 19 dB

         Efficiency - 41.5%

         IMD ó - 32.5 dBc

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power



Features

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large- Signal Impedance Parameters

• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.