Producent | Numer części | Arkusz danych | Szczegółowy opis |
Toshiba Semiconductor |
1SS301
|
127Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATIONS)
|
1SS306
|
130Kb / 2P |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS)
|
Rohm |
IMN10
|
527Kb / 4P |
Switching Diode Ultra high speed switching High reliability.
|
Toshiba Semiconductor |
1SS181
|
130Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
1SS302
|
126Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
1SS360
|
129Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
1SS360F
|
121Kb / 3P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS)
|
1SS382
|
128Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)
|
1SS187
|
128Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
1SS337
|
150Kb / 2P |
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|