General description
A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features and benefits
■ 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
    ◆ Peak envelope power load power = 140 W
    ◆ Power gain = 21 dB
    ◆ Drain efficiency = 49 %
    ◆ Third order intermodulation distortion = −34 dBc
■ DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A:
    ◆ Average output power = 33 W
    ◆ Power gain = 21 dB
    ◆ Drain efficiency = 34 %
    ◆ Shoulder distance = −33 dBc (4.3 MHz from center frequency)
■ Integrated ESD protection
■ Excellent ruggedness
■ High power gain
■ High efficiency
■ Excellent reliability
■ Easy power control
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ Communication transmitter applications in the UHF band
■ Industrial applications in the UHF band