BF1012 Arkusz danych(PDF) - Siemens Semiconductor Group

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BF1012 Arkusz danych (PDF) - Siemens Semiconductor Group

BF1012 Datasheet PDF - Siemens Semiconductor Group


Numer części	BF1012

Pobierz	BF1012 Pobierz

Rozmiar pliku	33.42 Kbytes

Page	4 Pages

Producent	SIEMENS [Siemens Semiconductor Group]

Strona internetowa	http://www.siemens.com/

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Szczegółowy opis

Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

BF1012 Datasheet (PDF)

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Pobierz Arkusz danych

BF1012 Datasheet PDF - Siemens Semiconductor Group


Numer części	BF1012

Pobierz	BF1012 Click to download

Rozmiar pliku	33.42 Kbytes

Page	4 Pages

Producent	SIEMENS [Siemens Semiconductor Group]

Strona internetowa	http://www.siemens.com/

Logo

Szczegółowy opis	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network

BF1012 Arkusz danych (HTML) - Siemens Semiconductor Group

BF1012 Datasheet HTML 1Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 2Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 3Page - Siemens Semiconductor Group

BF1012 Datasheet HTML 4Page - Siemens Semiconductor Group

BF1012 Szczegóły Produktu

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled input stages up to 1GHz
• Operating voltage 12V
• Integrated stabilized bias network

Podobny numer części - BF1012

Producent	Numer części	Arkusz danych	Szczegółowy opis
Siemens Semiconductor G...	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Siemens Semiconductor G...	BF1012W	359Kb / 3P	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)

Podobny opis - BF1012

Producent	Numer części	Arkusz danych	Szczegółowy opis
Siemens Semiconductor G...	BF1005S	52Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1012S	43Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1005	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
	BF1009S	51Kb / 4P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
	BF2030W	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2030	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040W	31Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF2040	16Kb / 2P	Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
	BF1012W	359Kb / 3P	SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
	BF998	180Kb / 8P	Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)

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