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WFD830B Arkusz danych (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
WFD830B Datasheet PDF - Shenzhen Winsemi Microelectronics Co., Ltd
Numer części WFD830B
Pobierz  WFD830B Pobierz
Rozmiar pliku   434.55 Kbytes
Page   7 Pages
Producent  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Strona internetowa  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd
Szczegółowy opis Silicon N-Channel MOSFET

WFD830B Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
WFD830B Datasheet PDF - Shenzhen Winsemi Microelectronics Co., Ltd

Numer części WFD830B
Pobierz  WFD830B Click to download

Rozmiar pliku   434.55 Kbytes
Page   7 Pages
Producent  WINSEMI [Shenzhen Winsemi Microelectronics Co., Ltd]
Strona internetowa  http://www.winsemi.com
Logo WINSEMI - Shenzhen Winsemi Microelectronics Co., Ltd
Szczegółowy opis Silicon N-Channel MOSFET

WFD830B Arkusz danych (HTML) - Shenzhen Winsemi Microelectronics Co., Ltd


WFD830B Szczegóły Produktu

GeneralDescription

This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology lineaelectroniclampballast.



Features

■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V

■ Ultra-lowGatecharge(Typical18nC)

■ FastSwitchingCapability

■ 100%AvalancheTested

■ MaximumJunctionTemperatureRange(150℃)



 




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