DESCRIPTION
The CNY17F/G F is an optocoupler that employs a GaAs infrared emitting diode optically coupled to a silicon planar phototransistor detector. The component is incorporated in a plastic plug-in DIP-6 package.
The coupling device is suitable for signal transmission between two electrically separated circuits. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages.

FEATURES
• CNY17F G Lead Bend in Accordance with VDE 0805/0806 
• 5300 Volt Breakdown Voltage
• Base Terminal not connected for improved Common Mode Interface Immunity
• High Current Transfer Ratio, 4 Groups
   CNY17F/G F-1, 40 to 80%
   CNY17F/G F-2, 63 to 125%
   CNY17F/G F-3, 100 to 200%
   CNY17F/G F-4, 160 to 320%
• Low CTR Degradation
• High Collector-Emitter Voltage  VCEO=70 V
• 100% Burn-In
• VDE Approval #0883
   VDE Approval #0884 (Optional with Option 1, add-X001 suffix)
• Conforms to VDE #0805/0806