Description

The  FM24C64B  is  a  64-kilobit  nonvolatile  memory employing  an  advanced  ferroelectric  process.  A

ferroelectric  random  access  memory  or  FRAM  is nonvolatile  and  performs  reads  and  writes  like  a RAM. It provides reliable data retention for  38  years while  eliminating  the  complexities,  overhead,  and system  level  reliability  problems  caused  by EEPROM and other nonvolatile memories.

Features

64K bit Ferroelectric Nonvolatile RAM

Organized as 8,192 x 8 bits

High Endurance 1 Trillion (10¹²) Read/Writes

38 Year Data Retention

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process



Fast Two-wire Serial Interface

Up to 1 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz



Low Power Operation

5V operation

100 µA Active Current (100 kHz)

4 µA (typ.) Standby Current



Industry Standard Configuration

Industrial Temperature -40  C to +85  C

8-pin “Green”/RoHS SOIC (-G)