Complementary Silicon Power Plastic Transistors
   
. . . designed for low power audio amplifier and low–current, high–speed switching applications.
   
• High Collector–Emitter Sustaining Voltage —
        VCEO(sus) = 100 Vdc (Min) — MJE243, MJE253
• High DC Current Gain @ IC = 200 mAdc
         hFE = 40–200
                 = 40–120 — MJE243, MJE253
• Low Collector–Emitter Saturation Voltage —
          VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product —
      fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
      ICBO = 100 nAdc (Max) @ Rated VCB