PRODUCT DESCRIPTION

The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “Triple Passivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current.

FEATURES

    Low Offset Voltage: 50
V max

    Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max

    High Gain (hFE):

      500 min at IC= 1 mA

      300 min at IC= 1 μ
A

    Excellent Log Conformance: rBE ≡ 
0.3Ω

    Low Offset Voltage Drift: 0.1 μ
V/°C max

    Improved Direct Replacement for LM194/394