NX8349TS Arkusz danych(PDF) - California Eastern Labs

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NX8349TS Arkusz danych (PDF) - California Eastern Labs

NX8349TS Datasheet PDF - California Eastern Labs


Numer części	NX8349TS

Pobierz	NX8349TS Pobierz

Rozmiar pliku	333.49 Kbytes

Page	10 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis

LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

NX8349TS Datasheet (PDF)

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Pobierz Arkusz danych

NX8349TS Datasheet PDF - California Eastern Labs


Numer części	NX8349TS

Pobierz	NX8349TS Click to download

Rozmiar pliku	333.49 Kbytes

Page	10 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

NX8349TS Arkusz danych (HTML) - California Eastern Labs

NX8349TS Datasheet HTML 1Page - California Eastern Labs

NX8349TS Datasheet HTML 2Page - California Eastern Labs

NX8349TS Datasheet HTML 3Page - California Eastern Labs

NX8349TS Datasheet HTML 4Page - California Eastern Labs

NX8349TS Datasheet HTML 5Page - California Eastern Labs

NX8349TS Datasheet HTML 6Page - California Eastern Labs

NX8349TS Datasheet HTML 7Page - California Eastern Labs

NX8349TS Datasheet HTML 8Page - California Eastern Labs

NX8349TS Datasheet HTML 9Page - California Eastern Labs

NX8349TS Datasheet HTML 10Page - California Eastern Labs

Podobny numer części - NX8349TS

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NX8349TS	234Kb / 11P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX8349TS	246Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8349TS	705Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION

Podobny opis - NX8349TS

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	211Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	227Kb / 9P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
California Eastern Labs	NX8369TB	214Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	276Kb / 8P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
	NX6350EP	1,013Kb / 6P	LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
Renesas Technology Corp	NX8349YK	253Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8349TB	204Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8350TS	220Kb / 9P	LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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