NX5317 Arkusz danych(PDF) - California Eastern Labs

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NX5317 Arkusz danych (PDF) - California Eastern Labs

NX5317 Datasheet PDF - California Eastern Labs


Numer części	NX5317

Pobierz	NX5317 Pobierz

Rozmiar pliku	338.34 Kbytes

Page	9 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis

1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

NX5317 Datasheet (PDF)

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Pobierz Arkusz danych

NX5317 Datasheet PDF - California Eastern Labs


Numer części	NX5317

Pobierz	NX5317 Click to download

Rozmiar pliku	338.34 Kbytes

Page	9 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE

NX5317 Arkusz danych (HTML) - California Eastern Labs

NX5317 Datasheet HTML 1Page - California Eastern Labs

NX5317 Datasheet HTML 2Page - California Eastern Labs

NX5317 Datasheet HTML 3Page - California Eastern Labs

NX5317 Datasheet HTML 4Page - California Eastern Labs

NX5317 Datasheet HTML 5Page - California Eastern Labs

NX5317 Datasheet HTML 6Page - California Eastern Labs

NX5317 Datasheet HTML 7Page - California Eastern Labs

NX5317 Datasheet HTML 8Page - California Eastern Labs

NX5317 Datasheet HTML 9Page - California Eastern Labs

Podobny numer części - NX5317

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NX5310	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
	NX5310	293Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
	NX5310EH-AZ	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
	NX5310EH-AZ	293Kb / 7P	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
	NX5310EK-AZ	342Kb / 5P	NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS

Podobny opis - NX5317

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NX5315EH	283Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
NEC	NX5323EH	89Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Technology Corp	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
Renesas Technology Corp	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
California Eastern Labs	NX5522	185Kb / 7P	1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
California Eastern Labs	NX5323EH	173Kb / 7P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
Renesas Technology Corp	NX5313	220Kb / 9P	1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
	NX6308GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	NX6309GH	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
	PL10692EJ03V0DS	221Kb / 9P	1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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