NX6342EP Arkusz danych(PDF) - California Eastern Labs

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NX6342EP Arkusz danych (PDF) - California Eastern Labs

NX6342EP Datasheet PDF - California Eastern Labs


Numer części	NX6342EP

Pobierz	NX6342EP Pobierz

Rozmiar pliku	899.27 Kbytes

Page	6 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

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Szczegółowy opis

1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

NX6342EP Datasheet (PDF)

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Pobierz Arkusz danych

NX6342EP Datasheet PDF - California Eastern Labs


Numer części	NX6342EP

Pobierz	NX6342EP Click to download

Rozmiar pliku	899.27 Kbytes

Page	6 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

NX6342EP Arkusz danych (HTML) - California Eastern Labs

NX6342EP Datasheet HTML 1Page - California Eastern Labs

NX6342EP Datasheet HTML 2Page - California Eastern Labs

NX6342EP Datasheet HTML 3Page - California Eastern Labs

NX6342EP Datasheet HTML 4Page - California Eastern Labs

NX6342EP Datasheet HTML 5Page - California Eastern Labs

NX6342EP Datasheet HTML 6Page - California Eastern Labs

Podobny numer części - NX6342EP

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	NX6342EP	202Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
Renesas Technology Corp	NX6342EP	194Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

Podobny opis - NX6342EP

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NX8341	351Kb / 13P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TB	102Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
NEC	NX8346TS	89Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX6342EP	202Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
	NX8346TS	172Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8369TB	213Kb / 9P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
California Eastern Labs	NX8346TS	195Kb / 8P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8346TB	205Kb / 9P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
	NX8341	372Kb / 15P	1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
Renesas Technology Corp	NX6342EP	194Kb / 7P	LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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