Description
The 20006 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 4 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 4 Watts, 860–900 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated