Description
The 20145 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 9 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 9 Watts, 915–960 MHz
• Class AB Characteristics
• 50% Min Collector Efficiency at 9 Watts
• Tested to solderability standards:
    - IEC-68-2-54
    - ANSI/J Std-002-A
• Gold Metallization
• Silicon Nitride Passivated
• Surface Mountable
• Available in Tape and Reel