Description
The 20177 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.

• 26 Volt, 960 MHz Characteristics
    - Output Power = 150 Watts (PEP)
    - Collector Efficiency = 50 Min at 150 Watts
    - IMD = -28 dBc Max at 150 Watts (PEP)
• Class AB Characteristics
• Gold Metallization
• Silicon Nitride Passivated