| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 Fairchild Semiconductor |
HGTG10N120BND
|
110Kb / 8P |
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
|
 Intersil Corporation |
HGTG10N120BND
|
82Kb / 7P |
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
January 2000 |
|
HGTG15N120C3D
|
101Kb / 9P |
35A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
May 1997 |
|
MCT3A65P100F2
|
67Kb / 8P |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT)
April 1999 |
|
MCTG35P60F1
|
50Kb / 5P |
35A, 600V P-Type MOS Controlled Thyristor (MCT)
April 1999 |
|
MCTV65P100F1
|
46Kb / 5P |
65A, 1000V P-Type MOS Controlled Thyristor (MCT)
April 1999 |
|
MCTV75P60E1
|
50Kb / 5P |
75A, 600V P-Type MOS Controlled Thyristor (MCT)
April 1999 |
 IXYS Corporation |
MMIX1H60N150V1
|
207Kb / 5P |
1500V MOS Gated Thyristor w/ Anti-Parallel Diode
|
|
IXHX40N150V1HV
|
180Kb / 4P |
1500V MOS Gated Thyristor w/ Anti-Parallel Diode
|
 Nell Semiconductor Co.,... |
NK100KQ
|
825Kb / 5P |
Anti-parallel Thyristor Module
|