2SC3585 Arkusz danych(PDF) - California Eastern Labs

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2SC3585 Arkusz danych (PDF) - California Eastern Labs

2SC3585 Datasheet PDF - California Eastern Labs


Numer części	2SC3585

Pobierz	2SC3585 Pobierz

Rozmiar pliku	1165.67 Kbytes

Page	5 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis

MICROWAVE LOW NOISE AMPLIFIER

2SC3585 Datasheet (PDF)

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Pobierz Arkusz danych

2SC3585 Datasheet PDF - California Eastern Labs


Numer części	2SC3585

Pobierz	2SC3585 Click to download

Rozmiar pliku	1165.67 Kbytes

Page	5 Pages

Producent	CEL [California Eastern Labs]

Strona internetowa	http://www.cel.com

Logo

Szczegółowy opis	MICROWAVE LOW NOISE AMPLIFIER

2SC3585 Arkusz danych (HTML) - California Eastern Labs

2SC3585 Datasheet HTML 1Page - California Eastern Labs

2SC3585 Datasheet HTML 2Page - California Eastern Labs

2SC3585 Datasheet HTML 3Page - California Eastern Labs

2SC3585 Datasheet HTML 4Page - California Eastern Labs

2SC3585 Datasheet HTML 5Page - California Eastern Labs

2SC3585 Szczegóły Produktu

DESCRIPTION
The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated base surface process (DNP process) which is a proprietary new fabrication technique which provides excellent noise figures at high current values. This allows excellent associated gain and very wide dynamic range.
FEATURES
• NF 1.8 dB TYP. @f = 2.0 GHz
• Ga 9 dB TYP. @f = 2.0 GHz

Podobny numer części - 2SC3585

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC3585	103Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
Guangdong Kexin Industr...	2SC3585	38Kb / 1P	NPN Silicon Epitaxial Transistor
Renesas Technology Corp	2SC3585	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
Inchange Semiconductor ...	2SC3585	308Kb / 6P	Low Noise and High Gain
NEC	2SC3585-T1B	103Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

Podobny opis - 2SC3585

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC5195	63Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Maxim Integrated Produc...	MAX2611	55Kb / 6P	DC-to-Microwave, Low-Noise Amplifier 19-1094; Rev 0; 6/96
Maxim Integrated Produc...	MAX2650	53Kb / 6P	DC-to-Microwave, 5V Low-Noise Amplifier 19-1135; Rev 1; 8/03
Renesas Technology Corp	2SC3583	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	2SC4095	329Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
	UPA806T	209Kb / 8P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
California Eastern Labs	2SC3583	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
	2SC4094	1Mb / 5P	MICROWAVE LOW NOISE AMPLIFIER
	2SC4095	1Mb / 6P	MICROWAVE LOW NOISE AMPLIFIER
Renesas Technology Corp	2SC3585	321Kb / 10P	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

O California Eastern Labs

California Eastern Laboratories (CEL) is a leading semiconductor manufacturer and technology company that specializes in the design, development, and production of advanced RF and microwave components and systems. The company is headquartered in Santa Clara, California, and has been in operation for over 60 years.

CEL is known for its extensive range of high-performance RF and microwave products, including RF switches, mixers, amplifiers, and modules. The company also offers custom design services for customers with specific needs. CEL's products are widely used in various industries, including wireless communication, aerospace and defense, automotive, and medical.

CEL is also the exclusive sales and marketing partner of Renesas Electronics Corporation for North and South America, providing Renesas' broad portfolio of semiconductors to customers in the region.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.

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