Designed for broadband commercial and military applications up to
200 MHz frequency range. The high–power, high–gain and broadband
performance of this device make possible solid state transmitters for
FM broadcast or TV channel frequency bands.

N–Channel enhancement mode MOSFET

•  Guaranteed performance at 150 MHz, 28 V:
 Output power = 80 W   Gain = 11 dB (13 dB typ.)   Efficiency = 55% min. (60% typ.)  •  Low thermal resistance
•  Ruggedness tested at rated output power
•  Nitride passivated die for enhanced reliability
•  Low noise figure — 1.5 dB typ at 2.0 A, 150 MHz
•  Excellent thermal stability; suited for Class A operation