Cree’s CGH60120D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

FEATURES
• 13 dB Typical Small Signal Gain at 4 GHz
• 12 dB Typical Small Signal Gain at 6 GHz
• 120 W Typical PSAT
• 28 V Operation
• High Breakdown Voltage
• High Temperature Operation
• Up to 6 GHz Operation
• High Effciency

APPLICATIONS
• 2-Way Private Radio
• Broadband Amplifers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms