Producent | Numer części | Arkusz danych | Szczegółowy opis |
SHENZHEN DOINGTER SEMIC... |
UPA2820T1S
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1Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
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AON7534
|
884Kb / 6P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
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MTB4D0N03BV8
|
2Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|
WSD3066DN
|
2Mb / 5P |
N-Channel MOSFET uses advanced SGT to minimize on-state resistance
|
TPCC8062-H
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2Mb / 5P |
N-Channel MOSFET uses advanced trench SGT to minimize on-state resistance
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TPN11003NL
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1Mb / 4P |
N-Channel MOSFET uses advanced trench technology to minimize on-state resistance
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Texas Instruments |
MAX4595
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694Kb / 17P |
[Old version datasheet] Low ON-State Resistance ON-State Resistance Flatness
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MAX4594
|
694Kb / 17P |
[Old version datasheet] Low ON-State Resistance ON-State Resistance Flatness
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MAX4597
|
694Kb / 17P |
[Old version datasheet] Low ON-State Resistance ON-State Resistance Flatness
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SHENZHEN DOINGTER SEMIC... |
ZC004TG
|
1Mb / 4P |
N-Channel MOSFET uses advanced SGT to minimize on-state reistance
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