Description

The IR2103(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features

 Floating channel designed for bootstrap operation

 Fully operational to +600V

 Tolerant to negative transient voltage

 dV/dt immune

 Gate drive supply range from 10 to 20V

 Undervoltage lockout

 3.3V, 5V and 15V logic compatible

 Cross-conduction prevention logic

 Matched propagation delay for both channels

 Internal set deadtime

 High side output in phase with HIN input

 Low side output out of phase with LIN input