GENERAL DESCRIPTION
The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).

FEATURES
   High output power for 1 dB compression (P1dB): 22 dBm
   High saturated output power (PSAT): 24 dBm
   High gain: 13 dB
   High output third-order intercept (IP3): 33.5 dBm
   Supply voltage: 10 V at 175 mA
   50 Ω matched input/output
   Die size: 2.82 mm × 1.50 mm × 0.1 mm

APPLICATIONS
   Test instrumentation
   Microwave radios and VSATs
   Military and space
   Telecommunications infrastructure
   Fiber optics