| Producent | Numer części | Arkusz danych | Szczegółowy opis |
Sanken electric |
SJPX-H3VR
|
244Kb / 5P |
SJPX-H3 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
|
SJPX-F2VR
|
242Kb / 5P |
SJPX-F2 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
|
SJPX-H6VR
|
232Kb / 5P |
SJPX-H6 has the characteristics of low VF and superior trr at high temperature. High efficiency is achieved by reducing the loss of circuit at high temperature.
|
Jianghai Europe GmbH |
CD11GGW
|
1Mb / 4P |
High Pipple Current at High Temperature
|
International Rectifier |
203CMQ
|
147Kb / 5P |
The 203CMQ high current Schottky rectifier module series has been optimized for low reverse leakage at high temperature.
|
Sanken electric |
SJPB-L4VL
|
236Kb / 5P |
SJPB-L4 is a Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal.
|
ice Components, Ins. |
IN08034
|
37Kb / 2P |
Isat is the current at which the inductance drops by 15%.
|
|
IN08052
|
37Kb / 2P |
Isat is the current at which the inductance drops by 15%.
|
|
IN08106
|
37Kb / 2P |
Isat is the current at which the inductance drops by 20%.
|
|
IN08128
|
57Kb / 2P |
Isat is the current at which the inductance drops by 20%.
|
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