Description
These devices are high voltage fast-switching NPN power transistors. They are manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. They use a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The devices are designed for use in lighting applications and low cost switch-mode power supplies.

Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Integrated antiparallel collector-emitter diode

Applications
■ Electronic ballast for fluorescent lighting
■ Flyback and forward single transistor low power converters