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ALD212902 Arkusz danych (PDF) - Advanced Linear Devices
ALD212902 Datasheet PDF - Advanced Linear Devices
Numer części ALD212902
Pobierz  ALD212902 Pobierz
Rozmiar pliku   105.43 Kbytes
Page   12 Pages
Producent  ALD [Advanced Linear Devices]
Strona internetowa  http://www.aldinc.com
Logo ALD - Advanced Linear Devices
Szczegółowy opis PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER MATCHED PAIR

ALD212902 Datasheet (PDF)

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ALD212902 Datasheet PDF - Advanced Linear Devices

Numer części ALD212902
Pobierz  ALD212902 Click to download

Rozmiar pliku   105.43 Kbytes
Page   12 Pages
Producent  ALD [Advanced Linear Devices]
Strona internetowa  http://www.aldinc.com
Logo ALD - Advanced Linear Devices
Szczegółowy opis PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE NANOPOWER MATCHED PAIR

ALD212902 Arkusz danych (HTML) - Advanced Linear Devices




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O Advanced Linear Devices

Advanced Linear Devices (ALD) is a semiconductor company that specializes in designing and manufacturing precision analog integrated circuits (ICs) and related products. The company was founded in 1985 and is based in Sunnyvale, California, USA.

ALD's products are used in a wide range of applications, including industrial automation, medical devices, automotive electronics, and telecommunications. Some of the company's key products include voltage references, operational amplifiers, and analog switches.

One of ALD's main areas of expertise is in the design and manufacture of MOSFETs (metal-oxide-semiconductor field-effect transistors) and JFETs (junction field-effect transistors) that are used in precision analog circuits. ALD's MOSFETs and JFETs are known for their low noise, low drift, high precision, and high reliability.

Overall, ALD has a reputation for producing high-quality analog ICs that are well-suited to demanding applications where accuracy, stability, and low power consumption are critical.

*Niniejsze informacje służą wyłącznie celom informacyjnym, nie ponosimy odpowiedzialności za jakiekolwiek straty lub szkody spowodowane przez powyższe informacje.




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