| Producent | Numer części | Arkusz danych | Szczegółowy opis |
QT Optoelectronics |
H24B1
|
68Kb / 1P |
THE H24B SERIES CONSISTS OF A GALLIUM ARSENIDE INFRARED EMITTING DIODE COUPLED WITH A SILICON PHOTOTRANSISTOR
|
KODENSHI_AUK CORP. |
PC-16T1
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
|
PC-17K1C
|
218Kb / 3P |
Photocoupler(Photocoupler consists of a Gallium Arsenide Infrared Emitting)
|
|
PSR11L
|
243Kb / 2P |
composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC at the light receiving side
|
NEC |
NDL4201A
|
33Kb / 2P |
850nm OPTICAL FIBER COMMUNICATIONS AlGaAs LIGHT EMITTING DIODE
|
KODENSHI_AUK CORP. |
KPS1008C
|
137Kb / 3P |
photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC
|
AVAGO TECHNOLOGIES LIMI... |
ACPL-M50L-500E
|
165Kb / 16P |
Low Power, 1MBd Digital Optocoupler
|
STMicroelectronics |
AN2809
|
725Kb / 22P |
The LED7706 consists of a high-efficiency monolithic boost converter and six controlled
11-Feb-2009 |
Richtek Technology Corp... |
RT7305
|
778Kb / 14P |
The RT7305 consists of a high voltage power MOSFET
|
Lumileds Lighting Compa... |
DS115
|
3Mb / 23P |
High-efficacy LED with a small light emitting surface and greater uniformity of light
|
Polish ▼ 
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Vietnamese
Indian
Mexican
British
New Zealand
