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K7R160982B Arkusz danych (PDF) - Samsung semiconductor

K7R160982B Datasheet PDF - Samsung semiconductor
Numer części K7R160982B
Pobierz  K7R160982B Pobierz
Rozmiar pliku   428.63 Kbytes
Page   19 Pages
Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Szczegółowy opis 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM

K7R160982B Datasheet (PDF)

Go To PDF Page Pobierz Arkusz danych
K7R160982B Datasheet PDF - Samsung semiconductor

Numer części K7R160982B
Pobierz  K7R160982B Click to download

Rozmiar pliku   428.63 Kbytes
Page   19 Pages
Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor
Szczegółowy opis 512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM

K7R160982B Arkusz danych (HTML) - Samsung semiconductor


K7R160982B Szczegóły Produktu

GENERAL DESCRIPTION

The K7R163682B,K7R161882B and K7R160982B are 18,874,368-bits QDR(Quad Data Rate) Synchronous Pipelined Burst SRAMs.

They are organized as 524,288 words by 36bits for K7R163682B, 1,048,576 words by 18 bits for K7R161882B and 2,097,152 words by 9bits for K7R160982B.



FEATURES

• 1.8V+0.1V/-0.1V Power Supply.

• DLL circuitry for wide output data valid window and future freguency scaling.

• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,

1.8V+0.1V/-0.1V for 1.8V I/O.

• Separate independent read and write data ports with concurrent read and write operation

• HSTL I/O

• Full data coherency, providing most current data .

• Synchronous pipeline read with self timed early write.

• Registered address, control and data input/output.

• DDR(Double Data Rate) Interface on read and write ports.

• Fixed 2-bit burst for both read and write operation.

• Clock-stop supports to reduce current.

• Two input clocks(K and K) for accurate DDR timing at clock rising edges only.

• Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches.

• Two echo clocks (CQ and CQ) to enhance output data traceability.

• Single address bus.

• Byte write (x9, x18, x36) function.

• Sepatate read/write control pin(R and W)

• Simple depth expansion with no data contention.

• Programmable output impenance.

• JTAG 1149.1 compatible test access port.

• 165FBGA(11x15 ball array FBGA) with body size of 13x15mm



 




Podobny numer części - K7R160982B

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Samsung semiconductor
K7R160982B SAMSUNG-K7R160982B Datasheet
463Kb / 20P
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
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Podobny opis - K7R160982B

ProducentNumer częściArkusz danychSzczegółowy opis
logo
Samsung semiconductor
K7Q161882 SAMSUNG-K7Q161882 Datasheet
503Kb / 17P
512Kx36 & 1Mx18 QDR b2 SRAM
K7Q161862 SAMSUNG-K7Q161862 Datasheet
335Kb / 17P
512Kx36 & 1Mx18 QDRTM b2 SRAM
K7J161882B SAMSUNG-K7J161882B Datasheet
374Kb / 17P
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
K7Q163652A SAMSUNG-K7Q163652A Datasheet
505Kb / 17P
512Kx36 & 1Mx18 QDRTM b2 SRAM
K7J163682B SAMSUNG-K7J163682B Datasheet
411Kb / 18P
512Kx36 & 1Mx18 DDR II SIO b2 SRAM
K7K1636T2C SAMSUNG-K7K1636T2C Datasheet
407Kb / 19P
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
K7Q163662B SAMSUNG-K7Q163662B Datasheet
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K7Q163664B SAMSUNG-K7Q163664B_10 Datasheet
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K7R163682B SAMSUNG-K7R163682B Datasheet
463Kb / 20P
512Kx36 & 1Mx18 & 2Mx9 QDRTM II b2 SRAM
K7R163684B SAMSUNG-K7R163684B_06 Datasheet
456Kb / 19P
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