PTF080101M pdf, PTF080101M Szczegółowy opis, PTF080101M Arkusz danych, PTF080101M view ::: ALLDATASHEET :::

Numer części	PTF080101M

Szczegółowy opis	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz

Rozmiar pliku	258.49 Kbytes

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Producent	INFINEON [Infineon Technologies AG]

Strona internetowa	http://www.infineon.com

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Podobny numer części - PTF080101M

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05

Producent	Numer części	Arkusz danych	Szczegółowy opis
Infineon Technologies A...	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24
	PTF080601	293Kb / 6P	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz 2003-12-05
	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
Tyco Electronics	MAPLST0810-030CF	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
Infineon Technologies A...	PTF210101M	276Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18