2SC3355 pdf, 2SC3355 Szczegółowy opis, 2SC3355 Arkusz danych, 2SC3355 view ::: ALLDATASHEET :::

Numer części	2SC3355

Szczegółowy opis	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

Rozmiar pliku	293.26 Kbytes

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Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

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Podobny numer części - 2SC3355

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC3355	102Kb / 8P	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Unisonic Technologies	2SC3355	107Kb / 3P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Unisonic Technologies	2SC3355	82Kb / 2P	HIGH FREQUENCY LOW NOISE AMPLIFIER
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
American Microsemicondu...	2SC3355	438Kb / 1P	NPN Silicon Epitaxial Transistor

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC3663	110Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5432	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5433	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5434	61Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5435	59Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
California Eastern Labs	NE85634	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5013	190Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Renesas Technology Corp	2SC5432	314Kb / 12P	NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION February 2002