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STN4546 Arkusz danych (PDF) - Stanson Technology

Numer części	STN4546

Szczegółowy opis	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Rozmiar pliku	363.62 Kbytes

Html View	1 2 3 4 5 6

Producent	STANSON [Stanson Technology]

Strona internetowa	http://www.stansontech.com

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STN4546 Arkusz danych (PDF) - Stanson Technology

Podobny numer części - STN4546

Producent	Numer części	Arkusz danych	Szczegółowy opis
SHENZHEN DOINGTER SEMIC...	STN4546	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
VBsemi Electronics Co.,...	STN4546S8RG	1Mb / 8P	N-Channel 100-V (D-S) MOSFET

Podobny opis - STN4546

Producent	Numer części	Arkusz danych	Szczegółowy opis
Stanson Technology	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4526	616Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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