RJK03P7DPA pdf, RJK03P7DPA Szczegółowy opis, RJK03P7DPA Arkusz danych, RJK03P7DPA view ::: ALLDATASHEET :::

Numer części	RJK03P7DPA

Szczegółowy opis	MOS2 30 V, 30 A, 5.3 m max. High Speed Power Switching

Rozmiar pliku	259.95 Kbytes

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Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

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Podobny numer części - RJK03P7DPA

Producent	Numer części	Arkusz danych	Szczegółowy opis
Renesas Technology Corp	RJK03P0DPA	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P0DPA-00-J5A	400Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P6DPA-00-J5A	241Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
	RJK03P9DPA	335Kb / 11P	Built in SBD Dual N-channel Power MOS FET High Speed Power Switching

Producent	Numer części	Arkusz danych	Szczegółowy opis
NXP Semiconductors	PBSS303PZ	172Kb / 14P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02-20 November 2009
SeCoS Halbleitertechnol...	SSG9435BDY	616Kb / 4P	-5.3 A, -30 V, RDS(ON) 36 m P-Ch Enhancement Mode Power MOSFET
Renesas Technology Corp	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
	RJK1206JPD	96Kb / 7P	120 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJK0631JPR	99Kb / 7P	60 V - 30 A - N Channel Power MOS FET High Speed Power Switching
	RJH60F4DPQ-A0	88Kb / 8P	600 V - 30 A - IGBT High Speed Power Switching
	RJK6018DPK	85Kb / 7P	600 V - 30 A - MOS FET High Speed Power Switching
	RJP60F4DPM	85Kb / 7P	600 V - 30 A - IGBT High Speed Power Switching
Nexperia B.V. All right...	PBSS303PZ	285Kb / 15P	30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 - 20 November 2009