2SC5508 pdf, 2SC5508 Szczegółowy opis, 2SC5508 Arkusz danych, 2SC5508 view ::: ALLDATASHEET :::

Numer części	2SC5508

Szczegółowy opis	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

Rozmiar pliku	229.94 Kbytes

Html View	1 2 3 4 5 6 7 8 9 Next

Producent	RENESAS [Renesas Technology Corp]

Strona internetowa	http://www.renesas.com

Logo

Podobny numer części - 2SC5508

Producent	Numer części	Arkusz danych	Szczegółowy opis
NEC	2SC5508	106Kb / 16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
NEC	2SC5508-T2	106Kb / 16P	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Renesas Technology Corp	2SC5508	229Kb / 10P	NPN SILICON RF TRANSISTOR

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NESG2046M33	292Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH -GAIN AMPLIFICATION
California Eastern Labs	NESG204619	320Kb / 4P	NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
Renesas Technology Corp	2SC3355	248Kb / 10P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	NESG2021M05	159Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
	NESG2031M05	158Kb / 14P	NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
	2SC4093	175Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
	2SC5606	201Kb / 9P	NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
California Eastern Labs	NE85634	216Kb / 6P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
California Eastern Labs	NE68719	189Kb / 5P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION FOR LOW-NOISE MICROWAVE AMPLIFICATION
Renesas Technology Corp	2SC5761	305Kb / 16P	NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION May 2003