| Producent | Numer części | Arkusz danych | Szczegółowy opis |
 Toshiba Semiconductor |
2SC3279
|
163Kb / 3P |
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
28-Nov-2000 |
|
2SC3279
|
335Kb / 3P |
Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications
01-Nov-2007 |
 SeCoS Halbleitertechnol... |
2SC3279
|
312Kb / 2P |
NPN Transistor Plastic-Encapsulate Transistors
|
|
2SC3279
|
295Kb / 2P |
NPN Plastic Encapsulated Transistor
|
 Jiangsu Changjiang Elec... |
2SC3279
|
501Kb / 3P |
TO-92 Plastic-Encapsulate Transistors
|