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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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1GEEG3S-R sprzedawcę |
| sprzedawcę | Numer części | Producent | Szczegółowy opis | Price | Qty. BuyNow | |
 TME | WPSDC001G-EAITI | APRO Co Ltd | Memory card: SDHC; SLC; 1GB; industrial; THEMIS-A; -40÷85°C |
| 2 | |
| SQ4483EY-T1_GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -30V; -30A; 7W; SO8 RoHS : Compliant |
| 0 | ||
| SQA470CEJW-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.25A; 13.6W RoHS : Compliant |
| 0 | ||
| SQJ122ELP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 350A; 60W RoHS : Compliant |
| 0 | ||
| SQJ136ELP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 350A; Idm: 600A |
| 0 | ||
| SQJ402EP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 100V; 32A; 83W; PowerPAK® SO8 RoHS : Compliant |
| 0 | ||
| SQJ407EP-T1_GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -30V; -56A; Idm: -155A; 68W RoHS : Compliant |
| 0 | ||
| SQJ423EP-T1_GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -40V; -31A; Idm: -100A; 68W RoHS : Compliant |
| 0 | ||
| SQJ992EP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 15A; Idm: 60A RoHS : Compliant |
| 0 | ||
| SQJA64EP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 15A; 45W RoHS : Compliant |
| 0 | ||
| SQJA80EP-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 80V; 60A; 68W; PowerPAK® SO8 RoHS : Compliant |
| 0 | ||
| SQJQ112E-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 100V; 296A; 600W RoHS : Compliant |
| 0 | ||
| SQS150ENW-T1_GE3 | Vishay Intertechnologies | Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 78A; Idm: 368A RoHS : Compliant |
| 0 | ||
| SQS415ENW-T1_GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -40V; -16A; 62.5W; Case: 1212 RoHS : Compliant |
| 0 | ||
| SQS481ENW-T1_GE3 | Vishay Intertechnologies | Transistor: P-MOSFET; unipolar; -150V; -4.7A; 62.5W RoHS : Compliant |
| 0 | ||
 ComSIT USA | SQ1902AELT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 0.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 57,680 | ||
| SI3993CDVT1GE3 | Vishay Intertechnologies | DUAL P-CHANNEL 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 2.9A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA RoHS : Compliant | 11,688 | |||
| SI7439DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor RoHS : Compliant | 8,950 | |||
| SQ2361AEEST1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 2.8A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 RoHS : Compliant | 5,540 | |||
| SIC473EDT1GE3 | Vishay Siliconix | Switching Regulator, Voltage-mode, 8.4A, 2000kHz Switching Freq-Max RoHS : Compliant | 5,120 | |||
| SI7716ADNT1GE3 | Vishay Intertechnologies | N-Channel 30 V (D-S) MOSFET Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 4,941 | |||
| SI7288DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 3,000 | |||
| SIC474EDT1GE3 | Vishay Intertechnologies | Switching Regulator, Voltage-mode, 6A, 2000kHz Switching Freq-Max RoHS : Compliant | 3,000 | |||
| SIR164DPT1GE3 | Vishay Intertechnologies | N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 3,000 | |||
| SQ3419EVT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 6.9A I(D), 40V, 0.058ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA RoHS : Compliant | 3,000 | |||
| SIB457EDKT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 3,000 | |||
| SI4804CDYT1GE3 | Vishay Intertechnologies | DUAL N-CHANNEL 30-V (D-S) MOSFET Small Signal Field-Effect Transistor, 7.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 2,500 | |||
| SI3473CDVT1GE3 | Vishay Intertechnologies | P-CHANNEL 12-V (D-S) MOSFET Small Signal Field-Effect Transistor, 8A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 1,465 | |||
| SQ1421EEHT1GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 235 | |||
| SI7997DPT1GE3 | Vishay Siliconix | Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK SO EP T/R RoHS : Compliant | 45 | |||
 Chip 1 Exchange | SI2302CDS-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 635,700 | ||
| SI3127DV-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 354,900 | |||
| RS1G-E3/61T | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 95,940 | |||
| SQ4946CEY-T1_GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 91,396 | |||
| SQ2362CES-T1_GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 85,800 | |||
| SI2304BDS-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 24,000 | |||
| SQ2361CEES-T1_GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 18,000 | |||
SI2323CDS-T1-GE3 | Vishay Siliconix | INSTOCK RoHS : Compliant | 15,315 | |||
| SIZF920DT-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 11,640 | |||
| SI2323CDS-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 7,800 | |||
SI7439DP-T1-GE3 | Vishay Siliconix | INSTOCK RoHS : Contact Manufacturer | 3,741 | |||
| SI4154DY-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 1,742 | |||
| SI7613DN-T1-GE3DKR | Vishay Intertechnologies | INSTOCK | 1,300 | |||
| WM8761GED | INSTOCK | 286 | ||||
| SI1032R-T1-GE3 | Vishay Intertechnologies | INSTOCK RoHS : Compliant | 8 | |||
 Avnet Abacus | ERJ1GEJ102C | Panasonic Electronic Components | SMD Chip Resistor 1 kohm 5 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEJ102C) RoHS : Compliant | 0 | ||
| ERJ1GEJ472C | Panasonic Electronic Components | SMD Chip Resistor 47 kohm 5 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEJ472C) RoHS : Compliant | 0 | |||
| ERJ1GEJ100C | Panasonic Electronic Components | SMD Chip Resistor 10 ohm 5 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEJ100C) RoHS : Compliant | 0 | |||
| ERJ1GEJ182C | Panasonic Electronic Components | SMD Chip Resistor 18 kohm 5 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEJ182C) RoHS : Compliant | 0 | |||
| ERJ1GEJ274C | Panasonic Electronic Components | SMD Chip Resistor 270 kohm 5 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEJ274C) RoHS : Compliant | 0 | |||
| ERJ1GEF1471C | Panasonic Electronic Components | SMD Chip Resistor 147 kohm 1 50 mW 0201 0603 Metric Thick Film High Reliability (Alt: ERJ1GEF1471C) RoHS : Compliant | 0 | |||
| ERJ1GEF8203C | Panasonic Electronic Components | SMD Chip Resistor 820 kohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF8203C) RoHS : Compliant | 0 | |||
| ERJ1GEF8201C | Panasonic Electronic Components | SMD Chip Resistor 82 kohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF8201C) RoHS : Compliant | 0 | |||
| ERJ1GEF2001C | Panasonic Electronic Components | SMD Chip Resistor 2 kohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF2001C) RoHS : Compliant | 0 | |||
| ERJ1GEF2740C | Panasonic Electronic Components | SMD Chip Resistor 274 ohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF2740C) RoHS : Compliant | 0 | |||
| ERJ1GEF8870C | Panasonic Electronic Components | SMD Chip Resistor 887 ohm 1 50 mW 0201 0603 Metric Thick Film High Reliability (Alt: ERJ1GEF8870C) RoHS : Compliant | 0 | |||
| ERJ1GEF2260C | Panasonic Electronic Components | SMD Chip Resistor 226 ohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF2260C) RoHS : Compliant | 0 | |||
| ERJ1GEF2873C | Panasonic Electronic Components | SMD Chip Resistor 287 kohm 1 50 mW 0201 0603 Metric Thick Film High Reliability - Tape and Reel (Alt: ERJ1GEF2873C) RoHS : Compliant | 0 | |||
| RAHVK271M1GEH0002E | TAIYO YUDEN | (Alt: RAHVK271M1GEH0002E) RoHS : Compliant | 0 | |||
| RAHVK151M1GEH0002E | TAIYO YUDEN | (Alt: RAHVK151M1GEH0002E) RoHS : Compliant | 0 | |||
 Braemac Americas-Symmetry | GD55LT01GEY2GY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | |
| TMJG0801GENL | Taoglas Antenna Solutions | RJ45 ICM, 1G Base-T, 1x1, Short Body, Tab Down, 10 pin THT, T+CMC, Shielded EMI Finger, LED, Commercial grade |
| 0 | ||
| GD55B01GEY2GY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM681GEG C8V | Silicon Motion Technology Corp | FeriSSD PCIe Gen4 x2/4 NVMe 2.0 1TB |
| 0 | ||
| GD55B01GEYIGY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM681GEE AGS SQZ7OJ | Silicon Motion Technology Corp | SM681GEE AGS SQZ7OJ |
| 0 | ||
| SM631GEA-BA-M1223W | Silicon Motion Technology Corp | SM631GEA-BA-M1223W |
| 0 | ||
| GD55LB01GEY2GY | GigaDevice Semiconductor (Beijing) Inc | NOR Flash |
| 0 | ||
| SM681GEE AFS SQW75J | Silicon Motion Technology Corp | SM681GEE AFS SQW75J |
| 0 | ||
| SM681GEE C8V | Silicon Motion Technology Corp | industrial-grade 256GB PCIe NVMe FerriSSD |
| 0 | ||
| SM681GEG C8VPG | Silicon Motion Technology Corp | PCIe 3D FerriSSD, I-temp |
| 0 | ||
| SM681GEF C8V | Silicon Motion Technology Corp | industrial-grade 512GB embedded solid-state drive |
| 0 | ||
| SM681GEG C8VPGZ73F | Silicon Motion Technology Corp | PCIE 1TB 3D FERRISSD, I-TEMP |
| 0 | ||
| SM681GED C8V | Silicon Motion Technology Corp | Solid State Drive (SSD) FLASH - NAND (TLC) 128GB NVMe BGA |
| 0 | ||
| SM681GEF C8VT | Silicon Motion Technology Corp | PCIe 512GB 3D FerriSSD, I-temp, TLC moe |
| 0 | ||
 Component Electronics, Inc | ERJ-1GEF20R0C | Panasonic Electronic Components | IN STOCK SHIP TODAY |
| 900,000 | |
| SI1411DH-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 2,851 | ||
| ERJ-1GEF3903C | Panasonic Electronic Components | IN STOCK SHIP TODAY |
| 2,295 | ||
| SIC531CD-T1-GE3 | Vishay Siliconix | IN STOCK SHIP TODAY |
| 2,000 | ||
| SIP32430DN-T1-GE4 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 1,480 | ||
| SIR164DP-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 1,390 | ||
| SI2304BDS-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 800 | ||
| SI2307BDS-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 747 | ||
| SI2334DS-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 715 | ||
| ERJ-1GEF3572C | Panasonic Electronic Components | IN STOCK SHIP TODAY |
| 200 | ||
| ERJ-1GEF80R6C | Panasonic Electronic Components | IN STOCK SHIP TODAY |
| 64 | ||
| SI2302CDS-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 62 | ||
| SI7450DP-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant | 15 | |||
| SQA410EJ-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY |
| 8 | ||
| SIHH21N60E-T1-GE3 | Vishay Intertechnologies | IN STOCK SHIP TODAY RoHS : Compliant |
| 6 | ||
 DB Roberts | M3211GE | Heyco | LTCG PG9 GRAY 10-1.4MM W/3168 | 0 | ||
| D5PA3538X16591GENA | Southco | D5PA3538X16591GENA | 0 | |||
 Flip Electronics | SIC634CD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 295,000 | ||
| SI1012R-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 189,000 | |||
| A4931GETTR-T | Allegro MicroSystems LLC | Stock, Ship Today |
| 130,500 | ||
| SIC534CD-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 61,000 | |||
| A5931GESTR-1-T-UN-06 | Allegro MicroSystems LLC | Stock, Ship Today |
| 24,000 | ||
| SI2304BDS-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 21,000 | |||
| SI7317DN-T1-GE3 | Vishay Intertechnologies | Stock, Ship Today RoHS : Compliant |
| 21,000 | ||
| CY7C1061GE30-10BVJXI | Cypress Semiconductor | Stock, Ship Today RoHS : Compliant |
| 15,441 | ||
| CY7C1061GE30-10BVJXIT | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 14,757 | ||
| CY7C1041GE-10VXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 6,433 | ||
| CY7C1061GE-10ZSXI | Infineon Technologies AG | Stock RoHS : Compliant | 5,724 | |||
| SI4922BDY-T1-GE3 | Vishay Intertechnologies | Stock RoHS : Compliant | 2,500 | |||
| CY7S1061GE30-10BVXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 653 | ||
| CY7C1061GE30-10BVXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 535 | ||
| CY7C1061GE18-15ZSXI | Infineon Technologies AG | Stock, Ship Today RoHS : Compliant |
| 185 | ||
 Venkel Ltd. | US1G-EVL | VENKEL LTD | Rectifier;DO-214AC;400V;1A RoHS : Not Compliant | 0 | ||
 Vyrian | SIR890DP-T1-GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 17,155 | ||
| ERJ1GEJ102C | Panasonic Electronic Components | Fixed Resistor, Metal Glaze/thick Film, 0.05W, 1000ohm, 25V, 5% +/-Tol, 200ppm/Cel, Surface Mount, 0201 RoHS : Compliant | 16,679 | |||
| SQJ409EP-T1_GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 14,415 | |||
| MAX16971GEEA/V+T | Analog Devices Inc | Power Management Circuit, BICMOS, PDSO16 RoHS : Compliant | 10,974 | |||
| MAX13331GEE-V-T | Analog Devices (Maxim Integrated) | 9,496 | ||||
| VXM7-1GE-27-12M0000000 | Microchip Technology Inc | Parallel - Fundamental Quartz Crystal, 12MHz Nom RoHS : Compliant | 7,540 | |||
| DVK-SFJK-1-GEVK | onsemi | 6,736 | ||||
| BLE-SWITCH001-GEVB | onsemi | 6,694 | ||||
| KVR400/1GETR | Kingston Technology Company | 6,501 | ||||
| KVR800D2/1GETR | Kingston Technology Company | 6,017 | ||||
| KVR667D2S8F5/1GEF | Kingston Technology Company | 4,993 | ||||
| AXM0F343-64-868-1-GEVK | onsemi | 4,874 | ||||
| NCP2811AFCT1GEVB | onsemi | 2,847 | ||||
| SQJ964EP-T1-GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 8A I(D), 60V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 692 | |||
| SI4684DY-T1-GE3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 16A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS : Compliant | 635 |
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