| Zakładka z wyszukiwarką danych komponentów |
|
B029-R sprzedawcę |
| sprzedawcę | Numer części | Producent | Szczegółowy opis | Price | Qty. BuyNow | |
![]() PEI Genesis | DPX2MA-67S67S-33B-0291 | ITT Interconnect Solutions |
| 0 | ||
![]() Powell Electronics | EB0296-000 | TE Connectivity | Power Connectors RoHS : Compliant |
| 14 | |
| AAB0298-00 | TE Connectivity | backshells, |
| 1 | ||
![]() Rutronik | IPB029N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 119A 2,9mOhm TO-263 RoHS : Compliant |
| 850 | |
![]() Avnet Abacus | W3334B0290 | Pulse Electronics Corporation | Patch Antenna Dual Band 24 GHz to 25 GHz 49 GHz to 6 GHz Adhesive Tape (Alt: W3334B0290) RoHS : Compliant | 0 | ||
| 28B0296-000 | Qnity Laird | (Alt: 28B0296-000) RoHS : Compliant | 0 | |||
| FFLI6B0297K-- | Kyocera AVX Components | (Alt: FFLI6B0297K--) RoHS : Compliant | 0 | |||
| FFLI6B0297KJE | Kyocera AVX Components | (Alt: FFLI6B0297KJE) RoHS : Compliant | 0 | |||
![]() EBV Elektronik | IPB029N15NM6ATMA1 | Infineon Technologies AG | (Alt: SP005924362) RoHS : Compliant | 0 | ||
IPB029N06N3GATMA1![]() | Infineon Technologies AG | Trans MOSFET NCH 60V 120A 3Pin TO263 TR (Alt: SP000453052) RoHS : Compliant | 0 | |||
| IPB029N06NF2SATMA1 | Infineon Technologies AG | Power MOSFET N Channel 60 V 120 A 29 Milliohms TO263 D2PAK 3 Pins Surface Mount (Alt: SP005588962) RoHS : Compliant | 0 | |||
| DSC6011HA2B-029.4912T | Microchip Technology Inc | MEMS OSC LVCMOS 294912MHz 25PPM 1833V 40 to 125C 16 x 12mm (Alt: DSC6011HA2B-029.4912T) RoHS : Compliant | 0 | |||
![]() FDH Electronics | M16878/4-BDB-0/2/9-1.00" | Whitmore/Wirenetics | Wire and Cable | 18,346 | ||
| 550T006NF2F0B0-29 | Glenair Inc | Connector RoHS : Not Compliant |
| 0 | ||
![]() Flip Electronics | FDB029N06 | onsemi | Stock, Ship Today RoHS : Compliant |
| 790 | |
![]() Vyrian | IPB029N06N3GATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 9,127 | ||
| VB029-E | STMicroelectronics | 8,456 | ||||
| VB029SP6TR-E | STMicroelectronics | 5,785 | ||||
IPB029N06N3GE8187ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,427 | |||
| VB029SP6-E | STMicroelectronics | 3,477 |
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