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DP9502AB sprzedawcę
sprzedawcęNumer częściProducentSzczegółowy opisPriceQty.
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TME		BDP 953 H6327 TR

 Infineon Technologies AG BDP 953 H6327 TR
2,000 : $0.249
2,000
BDP954H6327XTSA1

 Infineon Technologies AG Transistor: PNP; bipolar; 100V; 3A; 5W; SC73,SOT223
RoHS : Compliant
1,000 : $0.26
0
BDP953H6327XTSA1

 Infineon Technologies AG Transistor: NPN; bipolar; 100V; 3A; 5W; SC73,SOT223
RoHS : Compliant
2,000 : $0.246
1,000 : $0.258
0

ComSIT USA		BDP950E6778

 Infineon Technologies AG PNP SILICON AF POWER TRANSISTOR RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
305,000
BDP953E6327

 Infineon Technologies AG SILICON NPN TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
RoHS : Not Compliant
2,000
BDP950E6327

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
1,647
BDP954H6327

 Infineon Technologies AG TRANS PNP 100V 3A PG-SOT223-4-10
RoHS : Compliant
185

Chip 1 Exchange		SDP95

 Samsung Electro-Mechanics INSTOCK
10

Vyrian		BDP953H6327XTSA1

 Infineon Technologies AG Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
RoHS : Compliant
11,526
BDP953E6327HTSA1

 Infineon Technologies AG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
RoHS : Compliant
9,511
BDP950H6327XTSA1

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
7,532
BDP950E6327HTSA1

 Infineon Technologies AG RF Power Bipolar Transistor, 1-Element, Silicon, PNP
RoHS : Compliant
4,669
BDP953H6327XTSA1/SN

 Infineon Technologies AG Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
RoHS : Compliant
893
BDP953H6327

 Infineon Technologies AG Small Signal Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon
RoHS : Compliant
579

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